2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
CMM0016-BD
Chip Device Layout
Features
Ultra Wide Band Power Amplifier
Compact Size/Self Bias Architecture
Positive Gain Slope
10.0 dB Small Signal Gain
+30.0 dBm P1dB Compression Point
+39.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 10.0
dB with a +30.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+13.0 VDC
750 mA
+27.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=12.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
15.0
10.0
10.0
+/-1.0
40.0
+30.0
+41.0
+39.0
+12.0
690
Max.
22.0
-
-
-
-
-
-
-
-
+12.5
730
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
CMM0016-BD
Power Amplifier Measurements
CMM0016-BD Vd=12.0 V, Id=710 mA
15
14
13
12
Gain (dB)
Reverse Isolation (dB)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
CMM0016-BD Vd=12.0 V, Id=710 mA
11
10
9
8
7
6
5
1.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
Frequency (GHz)
1.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
Frequency (GHz)
CMM0016-BD Vd=12.0 V, Id=710 mA
0
0
-5
CMM0016-BD Vd=12.0 V, Id=710 mA
-5
Output Return Loss (dB)
1.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
Frequency (GHz)
Input Return Loss (dB)
-10
-15
-10
-15
-20
-25
-20
-25
-30
-35
1.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
-30
Frequency (GHz)
CMM0016-BD Vd=12.0 V, Id=710 mA
35
34
33
Output Power P1dB (dBm)
32
31
30
29
28
27
26
25
2
3
4
5
6
7
8
9
10 11
12 13 14 15 16
17 18 19 20
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
CMM0016-BD
Power Amplifier Measurements (cont.)
CMM0016-BD Vd=12.0 V, Id=720mA
35
34
33
Output Power (dBm)
50
45
40
35
PAE (%)
32
31
30
29
28
27
26
25
30
25
20
15
10
5
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
Frequency (GHz)
Psat
P1dB
PAE
CMM0016-BD Vd=See Legend, Id=710mA
34
33
32
Output Power P1dB (dBm)
31
30
29
28
27
26
25
24
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
Frequency (GHz)
Vd=13.0 V
Vd=12.0 V
Vd=11.0 V
Vd=9.0 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
CMM0016-BD
1.879
(0.074)
Mechanical Drawing
1.350
(0.053)
2
3
0.581
(0.023)
0.973
(0.038)
1
6
0.0
0.0
5
4
2.164 2.370
(0.085) (0.093)
2.034 2.274
(0.080) (0.090)
(Note: Engineering designator is M397)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.984 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)
Bond Pad #4 (Rs-12.0 )
Bond Pad #5 (Rs-1.5 )
Bond Pad #6 (Rs-6.0 )
Bias Arrangement
Vd
Bypass Capacitors
- See App Note [2]
2
3
RF Out
RF In
1
6
5
4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
CMM0016-BD
App Note [1] Biasing
- As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd=12V, Id=690 mA. For additional assistance in setting current via source resistor, see source resistance table below.
App Note [2] Bias Arrangement
- Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended. Additionally, to achieve the required broadband decoupling network a
high-Q Drain bias inductor with high-Q bypass capacitor is needed. The proper network is necessary in order to bring Drain bias into the
device with minimal impact on RF performance. The high-Q inductor is typically an air coil that can be purchased from an air coil
manufacturer (Microwave Components or Piconics for example). The air coil needs to have minimum current handling capability, thus
planned operating current needs to be defined and considered before defining actual air coil to be used. Mimix recommends 1.4 mil
diameter gold wire and 4 turns as a starting point and may need to be optimized based on the actual application. Self-resonance of the bias
inductor causes degradation in performance at both the low and high ends of the band. The self resonance is sensitive to spacing between
turns and number of turns used. For example, the more turns in the Drain bias inductor the lower the self-resonant frequency of the inductor
creating high end RF performance degradation. The opposite is true for a smaller number of turns.
CMM0016 - Source Resistance Table
Left
6
0
0
1
1
0
0
1
1
Center
1.5
0
0
0
0
1
1
1
1
Corner
12
0
1
0
1
0
1
0
1
Net R
Infinity
12.00
6.00
4.00
1.50
1.33
1.20
1.09
MTTF Graphs
1.0E+07
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
CMM0016-BD Vd=12.0 V, Id=690 mA
1.00E+03
CMM0016-BD Vd=12.0 V, Id=690 mA
1.0E+06
MTTF (hours)
1.00E+02
1.0E+05
FITS
1.00E+01
1.0E+04
1.0E+03
40
45
50
55
60
65
70
75
80
85
Backplate Temperature (deg C)
1.00E+00
40
45
50
55
60
65
70
75
80
85
Baseplate Temperature (deg C)
CMM0016-BD Vd=12.0 V, Id=690 mA
200
195
190
185
Tch (deg C)
180
175
170
165
160
155
150
40
45
50
55
60
65
70
75
80
85
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
